impurity band meaning in Chinese

杂质能带

There are mainly three arguments on the physical origin of the new conduction band minimum of ganas ( or galnnas ) . they are band anti - crossing model , gaas conduction band mixing model and impurity band model
关于ganas的导带带边的物理本质，目前主要有三种争论较激烈的观点，它们分别是能带反交叉模型， gaas导带混合模型，杂质带模型。
When x is above 1 . 3 % , the emission spectra are strongly broadened and do not show any well - defined features , and their peak positions shift to lower energies correspondingly with increasing x . the large band - gap bowing of gap1 - xnx alloy is induced by the impurity band formation due to the intercenter interaction
对中心发光的nn3束缚激子的零声子线及其声子伴线，并得到了nn3的所有声子伴线( l0 、 la 、 ta )的s因子在约20k卜50k范围内与温度的关系。